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MITSUBISHI Nch POWER MOSFET MITSUBISHI Nch POWER MOSFET
FY7BFH-02E FY7BFH-02E
HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE
FY7BFH-02E
OUTLINE DRAWING

Dimensions in mm
6.4 4.4
3.0
1.1
0.275 0.65

G 2.5V DRIVE G VDSS .................................................................................. 20V G rDS (ON) (MAX) .............................................................. 30m G ID ........................................................................................... 7A

SOURCE GATE DRAIN
TSSOP8
APPLICATION Li - ion battery, etc.
MAXIMUM RATINGS
Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg --
(Tc = 25C)
Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight Typical value VGS = 0V VDS = 0V
Conditions
Ratings 20 10 7 49 7 1.8 7.2 1.6 -55 ~ +150 -55 ~ +150 0.035
Unit V V A A A A A W C C g Sep. 2001
L = 10H
MITSUBISHI Nch POWER MOSFET
FY7BFH-02E
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25C)
Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (th) rDS (ON) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-a) trr Parameter Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time Test conditions ID = 1mA, VGS = 0V IG = 100A, VDS = 0V VGS = 10V, VDS = 0V VDS = 20V, VGS = 0V ID = 1mA, VDS = 10V ID = 7A, VGS = 4V ID = 3.5A, VGS = 2.5V ID = 7A, VGS = 4V ID = 7A, VDS = 10V VDS = 10V, VGS = 0V, f = 1MHz Limits Min. 20 10 -- -- 0.5 -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. -- -- -- -- 0.9 23 30 0.161 16 1400 520 400 30 100 190 190 0.85 -- 50 Max. -- -- 10 0.1 1.3 30 40 0.210 -- -- -- -- -- -- -- -- 1.1 78.1 -- Unit V V A mA V m m V S pF pF pF ns ns ns ns V C/W ns
VDD = 10V, ID = 3.5A, VGS = 4V, RGEN = RGS = 50
IS = 1.8A, VGS = 0V Channel to ambient IS = 1.8A, dis/dt = -50A/s
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE 2.0
POWER DISSIPATION PD (W) DRAIN CURRENT ID (A)
MAXIMUM SAFE OPERATING AREA
7 5 3 2 tw = 10s 100s
1.6
101
7 5 3 2 1ms
1.2
0.8
100
7 5 3 2
10ms
0.4
100ms TC = 25C Single Pulse DC 23 5 7 100 23 5 7 101 23 5
0
10-1 0 50 100 150 200
7
CASE TEMPERATURE TC (C)
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS (TYPICAL) 20
VGS = 5V 4V 3V 2.5V
OUTPUT CHARACTERISTICS (TYPICAL) 10
VGS = 5V 4V 3V 2.5V 2V TC = 25C Pulse Test 1.5V
2V
DRAIN CURRENT ID (A)
16
DRAIN CURRENT ID (A)
8
TC = 25C Pulse Test
12
1.5V
6
8
4
PD = 1.6W
4
PD = 1.6W
2
0
0
0.2
0.4
0.6
0.8
1.0
0
0
0.1
0.2
0.3
0.4
0.5
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN-SOURCE VOLTAGE VDS (V)
Sep. 2001
MITSUBISHI Nch POWER MOSFET
FY7BFH-02E
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 1.0
DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V)
TC = 25C Pulse Test
ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 100
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (m)
TC = 25C Pulse Test
0.8
80
0.6
60
0.4
ID = 14A
40
VGS = 2.5V
0.2
7A 3A
20
4V
0
0
1.0
2.0
3.0
4.0
5.0
0 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 DRAIN CURRENT ID (A)
GATE-SOURCE VOLTAGE VGS (V)
TRANSFER CHARACTERISTICS (TYPICAL) 20 102
7 5 3 2
FORWARD TRANSFER ADMITTANCE VS. DRAIN CURRENT (TYPICAL)
DRAIN CURRENT ID (A)
FORWARD TRANSFER ADMITTANCE yfs (S)
16
TC = 25C 75C 125C
101
7 5 3 2
12
8
100
7 5 3 2 VDS = 10V Pulse Test 5 7 100 2 3 5 7 101 2 3 5
4
0
TC = 25C VDS = 10V Pulse Test
0
1.0
2.0
3.0
4.0
5.0
10-1
GATE-SOURCE VOLTAGE VGS (V)
DRAIN CURRENT ID (A)
CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 104
7 5 3 2 5 3 Ciss Coss Crss
SWITCHING CHARACTERISTICS (TYPICAL)
td(off) tf tr
103
7 5 3 2
SWITCHING TIME (ns)
2
CAPACITANCE Ciss, Coss, Crss (pF)
102
7 5 3 2
td(on)
102
7 5 3 2 TCh = 25C f = 1MHZ VGS = 0V
101 -1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 DRAIN-SOURCE VOLTAGE VDS (V)
101 7 5
TCh = 25C VDD = 10V VGS = 4V RGEN = RGS = 50 2 3 5 7 100 2 3 5 7 101
10-1
DRAIN CURRENT ID (A)
Sep. 2001
MITSUBISHI Nch POWER MOSFET
FY7BFH-02E
HIGH-SPEED SWITCHING USE
GATE-SOURCE VOLTAGE VS. GATE CHARGE (TYPICAL) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 20
VGS = 0V Pulse Test
GATE-SOURCE VOLTAGE VGS (V)
5.0
TCh = 25C ID = 7A
SOURCE CURRENT IS (A)
4.0
VDS = 7V 10V 15V
16
TC = 125C 75C 25C
3.0
12
2.0
8
1.0
4
0
0
8
16
24
32
40
0
0
0.4
0.8
1.2
1.6
2.0
GATE CHARGE Qg (nC)
SOURCE-DRAIN VOLTAGE VSD (V)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25C)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (tC)
ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101
VGS = 4V 7 ID = 7A 5 Pulse Test 3 2
THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 2.0
VDS = 10V ID = 1mA
GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V)
1.6
1.2
100
7 5 3 2
0.8
0.4
10-1
-50
0
50
100
150
0
-50
0
50
100
150
CHANNEL TEMPERATURE Tch (C)
CHANNEL TEMPERATURE Tch (C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25C)
TRANSIENT THERMAL IMPEDANCE Zth (ch-c) (C/W)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (tC)
BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4
VGS = 0V ID = 1mA
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 102
7 5 3 2 0.5 0.2 0.1 0.05 D = 1.0
1.2
101
7 5
1.0
0.8
3 0.02 2
100
7 5 3 2
0.01 Single Pulse
PDM
tw T D= tw T
0.6
0.4
-50
0
50
100
150
10-1 -4 10 2 3 5 710-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 PULSE WIDTH tw (s)
CHANNEL TEMPERATURE Tch (C)
Sep. 2001

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